Docente/Teacher

prof. Luca SELMI

Crediti/Credits

6 CFU

Lingua/Language

Inglese/English

Obiettivi formativi specifici/Objectives

Starting with the drift diffusion model of semiconductors, the lectures describe the operating principles of the main micro- and nnao-electronic semiconductor devices (bipolar and MOS) and the relation between the physical/geometrical/technological parameters and the electrical performance.

Competenze acquisite/Acquired skills

- Overlook of semiconductor devices available for different applications.
- Understanding the physical operating principles of bipolar and MOS devices.
- Understading the implication of geometry, technology and physics parameters on device performance.
- Understanding the drift diffusion model for semiconductor devices.

Programma/Lectures and exercises (topics and specific content)

Basics of semiconductor physics: electronic properties of crystals; band structures; intrinsic and doped semiconductors; Fermi level; Carrier concentration (4 hours).
The Drift-Diffusion model: tPoisson's equation; continuity and transport equations; mobility; diffusion coefficient; generation recombination in semiconductors (4 hours).
Semiconductor junctions:  p-n junctions and metal semiconductor junctions; a glimpse on LED diodes, avalanche photodiodes and solar cells (12 hours).
The bipolar transistor: fundamental static behavior and second order effects; a glimpse of heterojunction bipolar transistors (12 hours).
The MOS transistor: fundamentals of the static behavior; short channel effects and mobility degradation; dynamic behavior (12 hours).
Microfabrication Technology: lithography, deposition, etching, growth; fabrication examples (led, accelerometers, etc.) (12 hours).
Exercises: use of the electron device simulators (Dessis ISE TCAD suite) for the analysis of semiconductor devices (6 hours).
Labs (4 hours).

Bibliografia/References

- Lecture notes
- B. G. Streetman, S.K.Banerjee, ''Solid State Electronic Devices'', 6th ed. Prentice Hall
- Y. Taur, T.Ning, Fundamentals of Modern VLSI devices, Cambridge
- G. Ghione, Dispositivi per la microelettronica, McGraw-Hill
- J. P. Colinge, Semiconductor device physics
- Muller-Kamins, Device electronics for integrated circuits, Wiley

Modalità d'esame/Type of exam

oral exam

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